| PART |
Description |
Maker |
| DOM44KR032 HFDOM44KR192 DOM44KR016 |
40Pin Flash Disk Module Min.8MB ~ Max.1GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.1GB，真正的IDE接口模式3.3 / 5.0V工作
40Pin Flash Disk Module Min.8MB ~ Max.1GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.1GB，真正的IDE接口模式.3 / 5.0V工作
|
Hanbit Electronics Co., Ltd.
|
| HYMD5126468 HYMD512646L8 |
128Mx64|2.5V|K/H/L|x16|DDR SDRAM - Unbuffered DIMM 1GB 128Mx64 | 2.5V的| /升| x16 | DDR SDRAM无缓冲DIMM 1GB
|
Lattice Semiconductor, Corp.
|
| HYS64D128320HU-6-B HYS64D128320HU-5-B HYS72D128320 |
DDR SDRAM Modules - 1GB (128Mx64) PC2700 2-bank
DDR SDRAM Modules - 1GB (128Mx64) PC3200 2-bank
DDR SDRAM Modules - 1GB (128Mx72) PC3200 2-bank
DDR SDRAM Modules - 1GB (128Mx72) PC2700 2-bank
|
Infineon
|
| S30MS512P25BAW000 S30MS512P25BAW003 S30MS512P25BFW |
32M X 16 FLASH 1.8V PROM, 25 ns, PBGA137
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit??Technology
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBitTechnology 128M X 8 FLASH 1.8V PROM, 25 ns, PBGA137
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit?/a> Technology
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology
|
SPANSION LLC
Spansion, Inc.
|
| HY5PS1G431F HY5PS1G431F-C4 HY5PS1G431F-C5 HY5PS1G4 |
1Gb DDR2 SDRAM
|
HYNIX[Hynix Semiconductor]
|
| TS1GJFV60 |
1GB USB2.0 JetFlash
|
Transcend Information. Inc.
|
| H5TC1G63BFR H5TC1G43BFR H5TC1G83BFR |
1Gb DDR3L SDRAM
|
Hynix Semiconductor
|
| QLX111RIQT7 |
11.1Gb/s Lane Extender
|
Renesas Electronics Corporation
|
| H5TC1G43TFR H5TC1G83TFR |
1Gb DDR3L SDRAM
|
Hynix Semiconductor
|
| TS1GJF130 |
1GB USB2.0 JetFlash
|
Transcend Information. Inc.
|
